EDN

Gate driver for GaN transistors adds galvanic isolation

A new gate driver claims to ease the adoption of gallium nitride (GaN) technology in consumer and industrial applications such as power supplies in computer servers, factory-automation equipment, ...
Semiconductor Engineering

Gate Drive Circuit Without A Speed-Up Capacitor for a GaN Gate Injection Transistor

A technical paper titled “Gate Drive Circuit Suitable for a GaN Gate Injection Transistor” was published by researchers at Nagoya University. “A GaN gate injection transistor (GIT) has great potential ...
EDN

Simulating a GaN transistor

New power applications are perfect for GaN transistors. They are incredibly efficient, operate at very high speeds, and have compact dimensions. Any electricity project can be built with them with ...
Electronic Design

E-Mode GaN Transistor Works Like Silicon MOSFET for Easier Design-In

Check out our PCIM 2022 coverage. Cambridge GaN Devices (CGD), a spin-out of Cambridge University, is a fabless semiconductor company that develops a range of energy-efficient, enhancement-mode ...
Electronic Design

“Driving” GaN into High-Density Switching Power Supplies

This article is part of the TechXchange: Gallium Nitride (GaN). Gallium nitride (GaN) continues to gain ground in power electronics. Not only does the technology eliminate reverse recovery, but it ...
Mena FN

Wide Bandgap Wins The Future: How Sic And Gan Are Driving The Next Wave Of Power Electronics Innovation

(MENAFN- GlobeNewsWire - Nasdaq) The global power electronics market is undergoing significant transformation fueled by advances in electrification, renewable energy, and data infrastructure. Wide ...
Hosted on MSN

Researchers achieve record-breaking RF GaN-on-Si transistor performance for high-efficiency 6G power amplifiers

Imec researchers have set a new benchmark in RF transistor performance for mobile applications. They present a gallium nitride (GaN) MOSHEMT (metal-oxide-semiconductor high-electron-mobility ...
Business Wire

Cambridge GaN Devices Secures $32M to Drive Global Growth in Power Semiconductor Industry

CAMBRIDGE, England--(BUSINESS WIRE)--Cambridge GaN Devices (CGD), a leading innovator in gallium nitride (GaN) power devices, has successfully closed a $32 million Series C funding round. The ...
Science Daily

Are diamonds GaN's best friend? Revolutionizing transistor technology

A research team has fabricated a gallium nitride (GaN) transistor using diamond, which of all natural materials has the highest thermal conductivity on earth, as a substrate, and they succeeded in ...
Yahoo Finance

Wide Bandgap Wins the Future: How SiC and GaN Are Driving the Next Wave of Power Electronics Innovation

Dublin, Dec. 16, 2025 (GLOBE NEWSWIRE) -- The "The Global Power Electronics Market 2026-2036" has been added to ResearchAndMarkets.com's offering. Power electronics is no longer confined to specialist ...
Nanowerk

Are diamonds GaN's best friend? Revolutionizing transistor technology

(Nanowerk News) Researchers at Osaka Metropolitan University are proving that diamonds are so much more than just a girl’s best friend. Their groundbreaking research focuses on gallium nitride (GaN) ...