Abstract: Aiming at deep insights into the defect behaviors in the ferroelectric HZO thin film, we present a systematical study on the reliability property of $7\mathrm{~nm}$ HZO capacitor at the high ...
This study proposes a novel 1 Mb one-transistor one-capacitor ferroelectric random access memory array based on ferroelectric Hf0.5Zr0.5O2 with 3D cylindrical c ...
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