Abstract: A low-temperature annealing process for 4H-SiC/SiO2 stack in O2 ambient was found to annihilate the positive fixed charges induced by the interface nitridation process effectively, while ...
Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, A CI of Homi Bhaba National Institute, 1/AF Bidhannagar, Kolkata 700064, India ...
Abstract: Silicon-based optoelectronics (SBO), combining the advantages of both microelectronics and optoelectronics, has entered a period of rapid development. Applications based on SBO have expanded ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback